This inventor holds 1 USPTO granted patent. Top assignee: Intel Ndtm US LLC. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Ee Ee Eng: Inventor in Semiconductor Technology.
Introduction
Ee Ee Eng is an inventor based in Peoria, Arizona. His patent work concerns semiconductor structures, including technologies associated with three-dimensional NAND memory.
Latest Patents
Eng is credited with 1 patent: “Engineered Dielectric Profile for High Aspect-Ratio 3D NAND Structures.” The invention addresses dielectric profiles in high-aspect-ratio structures used in 3D NAND technology.
Career Highlights
Eng is associated with Intel NDTM US LLC. His listed patent reflects work in semiconductor engineering and memory-device fabrication.
Collaborations
Henok T. Mebrahtu is identified as Eng’s coworker. The available information does not specify whether Mebrahtu collaborated on the patent.
Conclusion
Ee Ee Eng’s recorded invention focuses on engineered dielectric profiles for 3D NAND structures, reflecting his connection to semiconductor innovation at Intel NDTM US LLC.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile