Santa Clara, CA, United States of America

Edward T Xia

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Applied Materials, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Edward T Xia. Retrieved from https://idiyas.com/inventor/edward-t-xia

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Edward T Xia: Inventor in Semiconductor Processing.

Introduction

Edward T Xia is an inventor based in Santa Clara, California. His patent work concerns semiconductor processing, particularly reducing impurities during radical treatment of metal-layer substrates.

Latest Patents

Xia is associated with 1 patent: “Higher Pressure Purge for Impurity Reduction in Radical Treatment Chamber.” The patent describes a post-deposition method that preheats a substrate bearing a metal layer in a radical treatment chamber. During preheating, purge gas is introduced and removed at a pressure between 400 and 535 Torr. The substrate is then exposed to radical species in a radical treatment process.

Career Highlights

Xia is associated with Applied Materials, Inc., a company involved in semiconductor manufacturing technologies. His patent reflects work on chamber processing conditions intended to reduce impurities during treatment.

Collaborations

The provided information identifies Pradeep Sampath Kumar and Norman L Tam as Xia’s coworkers. Their shared association with Applied Materials, Inc. places them within the same professional environment, though no specific joint patent work is indicated.

Conclusion

Edward T Xia’s patent focuses on a higher-pressure purge step designed to support impurity reduction in semiconductor radical treatment chambers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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