Edouard De Frésart

Title: Edouard De Frésart: Innovator in Semiconductor Technology

Introduction

Edouard De Frésart is a notable inventor based in Tempe, AZ (US), recognized for his contributions to semiconductor technology. He holds a total of 5 patents, showcasing his innovative spirit and technical expertise in the field.

Latest Patents

One of his latest patents is the "Bipolar Junction Transistor Structure with Improved Current Gain Characteristics." This invention focuses on a Bipolar Junction Transistor (BJT) that minimizes the variation in current gain through a trench pullback structure. The trench design enhances the distance charge carriers must travel, thereby reducing recombination in the emitter-base region. Another significant patent is the "Carrier Injection Protection Structure," which safeguards CMOS logic from substrate minority carrier injection. This structure employs a highly doped ring to provide a low resistance path to ground for injected minority carriers, ensuring the integrity of the CMOS logic.

Career Highlights

Throughout his career, Edouard De Frésart has worked with prominent companies such as Motorola Corporation and Semiconductor Components Industries, LLC. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Edouard has collaborated with talented individuals in the industry, including Patrice M Parris and Moaniss Zitouni. These collaborations have contributed to the advancement of his projects and innovations.

Conclusion

Edouard De Frésart's work in semiconductor technology exemplifies his commitment to innovation and excellence. His patents reflect significant advancements in the field, making him a key figure in the industry.