The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2002
Filed:
Mar. 04, 1998
Irenee M. Pages, Villeneuve Tolosane, FR;
Quang X. Nguyen, Castanet-Tolosan, FR;
Cynthia Trigas, Munich, DE;
Edouard de Frésart, Tempe, AZ (US);
Hak-Yam Tsoi, Scottsdale, AZ (US);
Rainer Thoma, Gilbert, AZ (US);
Jeffrey Pearse, Chandler, AZ (US);
Semiconductor Components Industries LLC, Phoenix, AZ (US);
Abstract
A vertically diffused FET ( ) is fabricated on a semiconductor die ( ) that includes an N substrate ( ) and an N epitaxial layer ( ). The FET ( ) has a source region ( ) and a channel region ( ) near a front surface ( ) of the epitaxial layer ( ), and a drain region in the substrate ( ). A trench ( ) extends through the epitaxial layer ( ) to the substrate ( ). A conductive layer ( ) fills the trench ( ), thereby forming a conductive plug ( ) electrically coupled to the substrate ( ). The conductive plug ( ) forms a top side drain electrode of the FET ( ).