Champagnier, France

Edgard Rauch

This inventor holds 1 USPTO granted patent and 2 EPO patents. Top assignee: Nanomegas Sprl. Active years: 2012.


% Patents Active = 100.0

 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: Edgard Rauch: Innovator in Electron Diffraction Technology

Introduction

Edgard Rauch is a notable inventor based in Champagnier, France. He has made significant contributions to the field of crystal structure analysis through his innovative methods and devices. His work has implications for various scientific and industrial applications.

Latest Patents

Rauch holds a patent for "Methods and devices for high throughput crystal structure analysis by electron diffraction." This invention involves a method and device for electron diffraction tomography of a crystal sample. It employs scanning of the electron beam over multiple discrete locations of the sample, combined with a beam scanning protocol as the beam converges at each location. This technique allows for the acquisition of a series of electron diffraction patterns, utilizing template matching to determine crystal orientations and thickness maps to obtain a common intensity scaling factor.

Career Highlights

Throughout his career, Edgard Rauch has worked with prominent organizations such as Nanomegas and the Institut Polytechnique de Grenoble. His experience in these institutions has allowed him to refine his expertise in electron diffraction and crystal analysis.

Collaborations

Rauch has collaborated with esteemed colleagues, including Stavros Nicolopoulos and Daniel Bultreys. These partnerships have contributed to the advancement of research in the field of electron diffraction.

Conclusion

Edgard Rauch's innovative work in electron diffraction technology has established him as a key figure in the field of crystal structure analysis. His contributions continue to influence scientific research and industrial applications.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
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