Company Filing History:
Years Active: 2002
Title: E Joseph Charlson: Innovator in Electrically Variable Multi-State Resistance Computing
Introduction
E Joseph Charlson is a notable inventor based in Houston, TX (US), recognized for his contributions to the field of resistive memory technology. He holds a patent for an innovative electrically operated, overwritable, multivalued, non-volatile resistive memory element. This invention showcases his expertise in developing advanced memory devices that utilize unique electrical properties.
Latest Patents
Charlson's patent, titled "Electrically Variable Multi-State Resistance Computing," introduces a two-terminal non-volatile memory device that incorporates a memory film material. This device is characterized by its ability to control resistance through short-duration low-voltage electrical pulses at room temperature, without the need for an applied magnetic field. The invention allows for an increase or decrease in resistance based on the polarity of the applied pulses, providing a large dynamic range of electrical resistance values. This multibit/multivalued storage capability is a significant advancement in memory technology.
Career Highlights
E Joseph Charlson is affiliated with the University of Houston System, where he continues to engage in research and development in the field of memory technology. His work has contributed to the understanding and application of colossal magnetoresistive (CMR) oxide materials in memory devices. With a total of 1 patent, Charlson's innovative approach has positioned him as a key figure in the advancement of resistive memory technology.
Collaborations
Charlson has collaborated with esteemed colleagues such as Alex Ignatiev and NaiJuan J Wu, further enhancing the research and development efforts in his field. Their combined expertise has contributed to the successful exploration of new technologies and methodologies in resistive memory.
Conclusion
E Joseph Charlson's work in electrically variable multi-state resistance computing represents a significant leap forward in memory technology. His innovative patent and ongoing research at the University of Houston System highlight his commitment to advancing the field. Through his collaborations and contributions, Charlson continues to influence the future of resistive memory devices.