Seoul, South Korea

Duck-nam Kim

This inventor holds 3 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2013-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Duck-nam Kim. Retrieved from https://idiyas.com/inventor/duck-nam-kim

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2013-2017

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3 patents (USPTO):Explore Patents

Title: The Innovations of Duck-nam Kim

Introduction

Duck-nam Kim is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of semiconductor technology. With a total of 3 patents to his name, Kim continues to push the boundaries of innovation in his industry.

Latest Patents

One of Duck-nam Kim's latest patents is a semiconductor device and method for fabricating the same. This invention includes a semiconductor substrate, a high-k dielectric pattern, and a metal-containing pattern that are sequentially stacked on the semiconductor substrate. Additionally, it features a gate pattern made of poly semiconductor, which is disposed on the metal-containing pattern, along with a protective layer that includes oxide, nitride, and/or oxynitride of the poly semiconductor.

Career Highlights

Duck-nam Kim is currently employed at Samsung Electronics Co., Ltd., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices.

Collaborations

Throughout his career, Duck-nam Kim has collaborated with notable colleagues, including Chongkwang Chang and Youngjoon Moon. These partnerships have contributed to the success of his innovative projects.

Conclusion

Duck-nam Kim's contributions to semiconductor technology exemplify his dedication to innovation. His patents reflect a commitment to advancing the field and improving device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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