The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 28, 2017
Filed:
Nov. 05, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Chongkwang Chang, Incheon, KR;
Youngjoon Moon, Seoul, KR;
Duck-nam Kim, Seoul, KR;
Yeong-Jong Jeong, Seoul, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 21/28 (2006.01); H01L 21/3213 (2006.01); H01L 21/8238 (2006.01); H01L 29/423 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/04 (2013.01); H01L 21/28247 (2013.01); H01L 21/32137 (2013.01); H01L 21/32138 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 29/4232 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 29/4966 (2013.01);
Abstract
A semiconductor device and a method of fabricating the same include a semiconductor substrate, a high-k dielectric pattern and a metal-containing pattern sequentially being stacked on the semiconductor substrate, a gate pattern including poly semiconductor and disposed on the metal-containing pattern, and a protective layer disposed on the gate pattern, wherein the protective layer includes oxide, nitride and/or oxynitride of the poly semiconductor.