Douglas A Buchanan

Title: Innovations of Douglas A Buchanan

Introduction

Douglas A Buchanan is a notable inventor based in Winnipeg, Canada. He has made significant contributions to the field of semiconductor technology, particularly in the development of advanced CMOS devices. With a total of 6 patents to his name, Buchanan's work has had a profound impact on the industry.

Latest Patents

One of his latest patents focuses on the "Process options of forming silicided metal gates for advanced CMOS devices." This innovation introduces silicide into the gate region of a CMOS device through various process options for both conventional and replacement gate types. The patent details the placement of silicide in the gate itself, its introduction in contact with the gate dielectric, and its use as a fill on top of an existing metal gate. Additionally, it discusses the introduction of silicide as a capping layer on polysilicon or on the existing metal gate. This technology is crucial for connecting PFET and NFET devices within a CMOS structure. The processes outlined in the patent protect the metal gate while allowing for the source and drain silicide to differ from the gate silicide. The invention provides a semiconducting substrate with a gate, source, and drain region, where a gate dielectric layer and a metal gate layer are deposited. The metal gate layer is capped with silicide, allowing for conventional device formation to proceed.

Career Highlights

Douglas A Buchanan is currently employed at International Business Machines Corporation (IBM), where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of CMOS devices, making them more efficient and effective.

Collaborations

Buchanan has collaborated with notable colleagues such as Evgeni Petrovich Gousev and Eduard Albert Cartier. These collaborations have further enriched his contributions to the field.

Conclusion

Douglas A Buchanan's innovative work in semiconductor technology, particularly in the development of advanced CMOS devices, showcases his expertise and dedication to the field. His patents reflect a commitment to enhancing the efficiency and functionality of modern electronic devices.