The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2003
Filed:
Sep. 18, 2002
Arne W. Ballantine, Round Lake, NY (US);
Douglas A. Buchanan, Cortandt Manor, NY (US);
Eduard A. Cartier, Leuven, BE;
Douglas D. Coolbaugh, Essex Junction, VT (US);
Evgeni P. Gousev, Mahapar, NY (US);
Harald F. Okorn-Schmidt, Putnam Valley, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods of forming front-end-of the line (FEOL) capacitors such as polysilicon-polysilicon capacitors and metal-insulator-silicon capacitors are provided that are capable of incorporating a high-dielectric constant (k of greater than about 8) into the capacitor structure. The inventive methods provide high capacitance/area devices with low series resistance of the top and bottom electrodes for high frequency responses. The inventive methods provide a significant reduction in chip size, especially in analog and mixed-signal applications where large areas of capacitance are used.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile