This inventor holds 1 USPTO granted patent. Top assignee: Seh America, Inc.. Active years: 2004.
Company Filing History:
Years Active: 2004
Title: Dorothy E. Goff: Innovator in Wafer Technology
Introduction
Dorothy E. Goff is a notable inventor based in Vancouver, WA (US). She has made significant contributions to the field of wafer technology, particularly in predicting oxygen-induced stacking fault density. Her innovative work has implications for the semiconductor industry, enhancing the understanding of wafer surface characteristics.
Latest Patents
Dorothy E. Goff holds a patent for "Methods and apparatus for predicting oxygen-induced stacking fault density in wafers." This patent presents a method for predicting the density of oxygen-induced stacking faults (OSF) on a wafer's surface by measuring surface roughness before and after a damaging process. The methods described can include various techniques such as wet sand blasting, dry sand blasting, lapping, surface grinding, and laser irradiation. The invention quantifies the surface roughness resulting from these processes and correlates the differences in roughness to predict the OSF density.
Career Highlights
Dorothy is currently associated with SEH America, Inc., where she applies her expertise in wafer technology. Her work has been instrumental in advancing the understanding of surface roughness and its effects on wafer quality. With her innovative approach, she has contributed to the development of automated systems for evaluating OSF density.
Collaborations
Some of her notable coworkers include Timothy L. Brown and Romony K. San. Their collaborative efforts have furthered research and development in the field of semiconductor technology.
Conclusion
Dorothy E. Goff's contributions to wafer technology through her innovative patent demonstrate her significant role in the semiconductor industry. Her work continues to influence advancements in the field, showcasing the importance of research and innovation in technology.