Suwon, South Korea

Dooyoung Gwak

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dooyoung Gwak. Retrieved from https://idiyas.com/inventor/dooyoung-gwak

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Dooyoung Gwak: Innovator in Semiconductor Technology

Introduction

Dooyoung Gwak is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent related to etching apparatuses.

Latest Patents

Gwak holds a patent titled "Operation method of etching apparatus and method of manufacturing semiconductor device using the same." This patent describes an operation method for an etching apparatus that involves transferring a substrate with an etching target layer, performing a series of etching and cleaning processes, and ultimately forming a predetermined etching pattern. He has 1 patent to his name.

Career Highlights

Dooyoung Gwak is currently employed at Samsung Electronics Co., Ltd., where he continues to advance semiconductor manufacturing techniques. His work has been instrumental in enhancing the efficiency and effectiveness of etching processes in semiconductor devices.

Collaborations

Gwak collaborates with talented colleagues, including Soonam Park and Janggyoo Yang, who contribute to the innovative environment at Samsung Electronics.

Conclusion

Dooyoung Gwak's contributions to semiconductor technology through his patent demonstrate his expertise and commitment to innovation in the field. His work continues to influence the development of advanced manufacturing techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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