The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Mar. 17, 2023
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dooyoung Gwak, Suwon-si, KR;

Soonam Park, Suwon-si, KR;

Janggyoo Yang, Suwon-si, KR;

Myungsun Choi, Suwon-si, KR;

Jaemin Ha, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01J 37/32 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32862 (2013.01); H01J 37/32743 (2013.01); H01J 37/32788 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 22/10 (2013.01); H01J 2237/24485 (2013.01); H01J 2237/3343 (2013.01);
Abstract

An operation method of an etching apparatus includes transferring, from a load lock chamber to a process chamber, a substrate on which an etching target layer is formed, first etching the etching target layer on the substrate in a first etching time, transferring the substrate to a storage location in a state in a vacuum state, intermediate cleaning the process chamber in a first cleaning time, transferring the substrate from the storage location to the process chamber, second etching the etching target layer on the substrate in a second etching time, and returning the substrate to the load lock chamber. The etching target layer is formed in a predetermined etching pattern by the first etching and the second etching.


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