Suwon-si, South Korea

Doohee Hwang

This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Doohee Hwang. Retrieved from https://idiyas.com/inventor/doohee-hwang-4utsk7x6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

Average Co-Inventor Count = 5.5


Company Filing History:


Years Active: 2026

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3 patents (USPTO):Explore Patents

Title: Doohee Hwang: Semiconductor and Memory Device Inventor

Introduction

Doohee Hwang is an inventor based in Suwon-si, South Korea, whose work focuses on semiconductor and memory technologies. He is associated with Samsung Electronics and holds 3 patents.

Latest Patents

One of Hwang’s latest patents describes a semiconductor device with a peripheral circuit structure and a vertically stacked cell structure. Its channel structure passes through multiple gate electrodes, while a common source layer covers the channel’s upper end. The source layer contains regions with different impurity conductivity types, and one region connects to part of the channel layer.

Another patent concerns a memory device that combines content-addressable memory with a memory cell array. During writing, the device uses a selected data pattern to provide input data to memory cells corresponding to an address received from an external device. During reading, it compares data from the memory array with stored patterns and returns the address associated with a matching pattern.

Career Highlights

Hwang’s listed patent work addresses semiconductor device structures and methods for handling data in memory systems. These inventions reflect technical contributions to device architecture and memory operations.

Collaborations

Hwang is associated with Samsung Electronics. His listed coworkers include Junha Hwang and Youngbin Lee.

Conclusion

Doohee Hwang’s patent portfolio highlights work in semiconductor structures and content-addressable memory, contributing to innovations in electronic devices and data storage.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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