Suwon-si, South Korea

Doogyu Lee

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Doogyu Lee. Retrieved from https://idiyas.com/inventor/doogyu-lee-05ki0j2x

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Doogyu Lee and EUV Semiconductor Process Control.

Introduction

Doogyu Lee is an inventor based in Suwon-si, South Korea, and is associated with Samsung Electronics Ltd. His patent work addresses the control of semiconductor manufacturing processes using extreme ultraviolet (EUV) lithography.

Latest Patents

Lee is named on 1 patent, titled “Method of Controlling Semiconductor Process and Semiconductor Processing Apparatus.” The invention describes forming sample overlay keys by exposing a photoresist layer on a sample wafer to a first EUV dose, then measuring overlay error and determining a correction parameter. The parameter is updated to account for the difference between the first dose and a second dose. Main overlay keys are then formed using the updated parameter, and their measured error is used to determine a main correction parameter. That parameter guides photolithography on a separate wafer.

Career Highlights

Lee’s listed patent reflects work on improving overlay control in semiconductor processing. By incorporating EUV dose differences into correction parameters, the method aims to support more accurate alignment during wafer photolithography.

Collaborations

Lee’s listed coworker is Seungyoon Lee. Both are associated with Samsung Electronics Ltd., the company connected with the patent.

Conclusion

Doogyu Lee’s patent focuses on adapting overlay correction to EUV exposure conditions, contributing a process-control approach for semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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