The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Jul. 05, 2023
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jeongjin Lee, Suwon-si, KR;
Doogyu Lee, Suwon-si, KR;
Seungyoon Lee, Suwon-si, KR;
Chan Hwang, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of controlling semiconductor process includes forming a plurality of sample overlay keys by irradiating a first dose of extreme ultraviolet (EUV) light to a first photoresist layer formed on at least one sample wafer; determining a sample correction parameter for correcting a sample overlay error measured from the plurality of sample overlay keys; updating the sample correction parameter based on a difference between the first dose and a second dose; forming a plurality of main overlay keys by irradiating a second dose of extreme ultraviolet light to a second photoresist layer formed on the sample wafer based on the updated sample correction parameter; determining the main correction parameter based on a main overlay error measured from the plurality of main overlay keys; and performing a photolithography process on a wafer different from the sample wafer based on the main correction parameter.