Beijing, China

Donglai Zhong

This inventor holds 1 USPTO granted patent. Top assignee: Peking University. Active years: 2021.


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2021

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Innovations of Donglai Zhong in Dual-Gate Transistors

Introduction

Donglai Zhong is a prominent inventor based in Beijing, China. He is known for his significant contributions to the field of semiconductor technology, particularly in the development of dual-gate transistors. His innovative work has implications for integrated circuits and their efficiency.

Latest Patents

Donglai Zhong holds a patent for "Dual-gate transistors and their integrated circuits and preparation method thereof." This patent describes a dual-gate transistor that features an auxiliary gate connected to the power supply of integrated circuits. This design creates a thick and high square-shaped potential barrier for minority carriers adjacent to the drain electrode. The potential barrier is transparent for majority carriers from the source electrodes, effectively inhibiting reverse minority carrier tunneling at large drain-source voltages. The transistor can be easily activated at small drain-source voltages without significantly reducing the on-state current. This innovation significantly suppresses ambipolar behavior, increases the current on/off ratio, reduces power consumption, and maintains high performance. The dual-gate transistor is particularly suitable for ultra-large-scale integrated circuits, as it does not require additional power sources.

Career Highlights

Donglai Zhong is affiliated with Peking University, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential to enhance the performance of CMOS circuits, providing high noise margins, low voltage loss, and reduced logic errors.

Collaborations

Donglai Zhong has collaborated with notable colleagues, including Chenyi Zhao and Zhiyong Zhang. Their joint efforts contribute to the ongoing research and development in the field of transistors and integrated circuits.

Conclusion

Donglai Zhong's innovative work in dual-gate transistors represents a significant advancement in semiconductor technology. His contributions are poised to impact the efficiency and performance of integrated circuits in various applications.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…