Singapore, Singapore

Dong Zhong


Average Co-Inventor Count = 2.7

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 2001-2007

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2 patents (USPTO):

Title: Innovations by Dong Zhong in Semiconductor Technology

Introduction

Dong Zhong is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He holds two patents that showcase his innovative approach to improving gate oxide layers in MOS/CMOS devices. His work has significant implications for the performance and reliability of electronic devices.

Latest Patents

One of Dong Zhong's latest patents is titled "Ultra-thin gate oxide through post decoupled plasma nitridation anneal." This invention addresses the challenges associated with the robustness of ultra-thin gate oxides. Traditionally, an anneal in pure helium was used to eliminate structural defects in the oxide. However, this method was found to degrade the electrical performance of devices. Dong's innovative solution involves annealing in a 1:4 oxygen-nitrogen mixture at 1,050°C and about 10 torr. This approach results in a gate oxide that is resistant to boron contamination while maintaining its electrical properties.

Another significant patent is the "Method of forming MOS/CMOS devices with dual or triple gate oxide." This method outlines a process for fabricating multiple thickness gate oxide layers. It begins with a silicon substrate that has at least a first and second gate oxide region. A first gate oxide layer is formed over the silicon substrate, followed by the deposition and planarization of a first layer of polysilicon. The process continues with masking and etching to expose the silicon substrate, allowing for the formation of a second gate oxide layer with a predetermined thickness that is less than that of the first layer.

Career Highlights

Dong Zhong is currently employed at Chartered Semiconductor Manufacturing Ltd, where he continues to advance semiconductor technology. His work has been instrumental in enhancing the performance of electronic devices through innovative gate oxide solutions.

Collaborations

Dong has collaborated with notable colleagues, including Jia Zhen Zheng and Yun Ling Tan, contributing to a dynamic research environment that fosters innovation.

Conclusion

Dong Zhong's contributions to semiconductor technology through his patents demonstrate his commitment to innovation and excellence in the field. His work not only addresses existing challenges but also paves the way for future advancements in electronic device performance.

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