The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2007
Filed:
Mar. 06, 2002
Dong Zhong, Singapore, SG;
Yun Ling Tan, Singapore, SG;
Chew Hoe Ang, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Dong Zhong, Singapore, SG;
Yun Ling Tan, Singapore, SG;
Chew Hoe Ang, Singapore, SG;
Jia Zhen Zheng, Singapore, SG;
Chartered Semiconductor Manufacturing Ltd., Singapore, SG;
Abstract
DPN (decoupled plasma nitridation) is used to improve robustness of ultra thin gate oxides. Conventionally, this is followed by an anneal in pure helium to remove structural defects in the oxide. However, annealing under these conditions has been found to cause a deterioration of the electrical performance of devices. This problem has been overcome by annealing, in a 1:4 oxygen-nitrogen mixture (1,050° C. at about 10 torr) instead of in helium or nitrogen oxide. This results in a gate oxide that is resistant to boron contamination without suffering any loss in its electrical properties.