This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignees: Semiconductor Manufacturing International (Beijing) Corporation, Semiconductor Manufacturing International (Shanghai) Corporation. Active years: 2023.
Company Filing History:
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1 out of 1,749 
Years Active: 2023
Title: The Innovations of Dong Xiang Cheng
Introduction
Dong Xiang Cheng is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative solutions that enhance the efficiency and functionality of semiconductor structures.
Latest Patents
Dong Xiang Cheng holds a patent for a semiconductor structure and its fabrication method. The patent describes a semiconductor structure that includes a base substrate, an optical waveguide layer, a first dielectric layer, and a cavity situated between the first dielectric layer and the optical waveguide layer. The design ensures that the cavity is located on the sidewall surfaces of the optical waveguide layer, with a bottom that is coplanar with the bottom of the optical waveguide layer. Additionally, a second dielectric layer is positioned on top of the cavity, effectively sealing it.
Career Highlights
Throughout his career, Dong Xiang Cheng has worked with prominent companies in the semiconductor industry. He has been associated with Semiconductor Manufacturing International Corporation in Shanghai and Beijing. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
Dong Xiang Cheng has collaborated with esteemed colleagues, including Jun Hui Liu and Hong Gang Dai. Their combined expertise has fostered an environment of innovation and creativity in their projects.
Conclusion
Dong Xiang Cheng's contributions to semiconductor technology are noteworthy, and his patent reflects his innovative spirit. His work continues to influence the industry, paving the way for future advancements in semiconductor structures.