Busan, South Korea

Dong Joo Kim

This inventor holds 1 USPTO granted patent. Top assignee: Hynix Semiconductor Inc.. Active years: 2009.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dong Joo Kim. Retrieved from https://idiyas.com/inventor/dong-joo-kim-eauq23ad

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: The Innovations of Dong Joo Kim

Introduction

Dong Joo Kim is a prominent inventor based in Busan, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique oxide pattern forming method, which is crucial for enhancing semiconductor devices.

Latest Patents

Dong Joo Kim holds a patent for an "Oxide pattern forming method and patterning method of semiconductor device." This method involves forming an oxide layer on a semiconductor substrate, implanting boron ions of not less than 1.0×10 atoms/cm² onto the oxide layer in a specified region, and wet-etching the oxide layer in the remaining region where the boron ions are not implanted. This innovative approach is essential for improving the efficiency and performance of semiconductor devices.

Career Highlights

Dong Joo Kim is currently employed at Hynix Semiconductor Inc., a leading company in the semiconductor industry. His work at Hynix has allowed him to focus on advancing semiconductor technologies and contributing to the company's success in the global market.

Collaborations

He has collaborated with notable colleagues, including Sang Hyun Lee and Woo Jin Kim. Their teamwork has fostered an environment of innovation and creativity, leading to advancements in semiconductor technology.

Conclusion

Dong Joo Kim's contributions to the field of semiconductor technology through his innovative patent and collaboration with esteemed colleagues highlight his importance as an inventor. His work continues to influence the development of advanced semiconductor devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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