The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2009
Filed:
Jun. 29, 2007
Hyo Geun Yoon, Yongin-si, KR;
Woo Jin Kim, Icheon-si, KR;
Dong Joo Kim, Pusan-si, KR;
Ji Yong Park, Seoul, KR;
Yong Soo Jung, Seoul, KR;
Geun Min Choi, Icheon-si, KR;
Young Wok Song, Icheon-si, KR;
Sang Hyun Lee, Icheon-si, KR;
Hyo Geun Yoon, Yongin-si, KR;
Woo Jin Kim, Icheon-si, KR;
Dong Joo Kim, Pusan-si, KR;
Ji Yong Park, Seoul, KR;
Yong Soo Jung, Seoul, KR;
Geun Min Choi, Icheon-si, KR;
Young Wok Song, Icheon-si, KR;
Sang Hyun Lee, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-Si, KR;
Abstract
An oxide pattern forming method comprises forming an oxide layer on a semiconductor substrate, implanting boron ions of not less than 1.0×10atoms/cmonto the oxide layer in a given region, and wet-etching the oxide layer in the remaining region where the boron ions are not implanted.