Company Filing History:
Years Active: 2008-2014
Title: The Innovations of Dong-hwa Kwak
Introduction
Dong-hwa Kwak is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of NAND flash memory devices. With a total of 8 patents to his name, his work has had a substantial impact on the industry.
Latest Patents
Among his latest patents, one notable invention is a method of manufacturing NAND flash memory devices. This innovation includes a NAND flash memory device that features a plurality of continuous conductors arranged on a common level of a multilayer substrate. The design incorporates respective conductive lines that extend in parallel along a first direction, along with contact pads at the ends of these lines and conductive dummy lines extending in parallel from the contact pads along a second direction. Another significant patent involves nonvolatile memory devices that utilize dummy word line segments to inhibit dishing during fabrication. This invention also features a similar structure with continuous conductors and contact pads, showcasing his expertise in enhancing memory device manufacturing processes.
Career Highlights
Dong-hwa Kwak is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His role at Samsung has allowed him to work on cutting-edge technologies and contribute to advancements in memory storage solutions.
Collaborations
Throughout his career, Dong-hwa has collaborated with talented individuals such as Jae-Kwan Park and Jang-ho Park. These collaborations have fostered innovation and have been instrumental in the development of his patented technologies.
Conclusion
Dong-hwa Kwak's contributions to the field of NAND flash memory technology are noteworthy. His innovative patents and work at Samsung Electronics Co., Ltd. highlight his role as a key figure in advancing semiconductor technology. His ongoing efforts continue to shape the future of memory devices.