The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2009
Filed:
Oct. 12, 2007
Sung-hyun Kwon, Seoul, KR;
Jae-hwang Sim, Seoul, KR;
Dong-hwa Kwak, Gyeonggi-do, KR;
Joo-young Kim, Gyeonggi-do, KR;
Sung-Hyun Kwon, Seoul, KR;
Jae-Hwang Sim, Seoul, KR;
Dong-Hwa Kwak, Gyeonggi-do, KR;
Joo-Young Kim, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method for fabricating a semiconductor device having fine contact holes is exemplarily disclosed. The method includes forming an isolation layer defining active regions on a semiconductor substrate. An interlayer dielectric layer is formed on the semiconductor substrate having the isolation layer. First molding patterns are formed on the interlayer dielectric layer. Second molding patterns positioned between the first molding patterns and spaced apart therefrom are also formed. A mask pattern surrounding sidewalls of the first and second molding patterns is formed. Openings are formed by removing the first and second molding patterns. Contact holes are formed by etching the interlayer dielectric layer using the mask pattern as an etching mask.