Gyeonggi-do, South Korea

Dong Ho Cha

This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Nanotech Corporation. Active years: 2024-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dong Ho Cha. Retrieved from https://idiyas.com/inventor/dong-ho-cha-o98p7hdd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 2 

% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2024-2025

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2 patents (USPTO):Explore Patents

Title: Innovations by Dong Ho Cha

Introduction

Dong Ho Cha is a notable inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of technology, particularly in the area of plasma chamber reliability. With a total of 2 patents, his work focuses on enhancing measurement accuracy in deposition operations.

Latest Patents

One of his latest patents is an "Apparatus for preventing contamination of self-plasma chamber." This invention aims to increase the reliability of measurements by preventing contamination within a self-plasma chamber. The technology includes a shielding mechanism that stops the inflow of negative electrode material, which is produced by a sputtering phenomenon. This occurs when a positive charge of plasma collides with a negative electrode, ensuring that the discharge chamber remains uncontaminated.

Career Highlights

Dong Ho Cha is currently associated with Nanotech Corporation, where he continues to innovate and develop new technologies. His expertise in plasma technology has positioned him as a valuable asset in the field.

Conclusion

Dong Ho Cha's contributions to technology through his patents demonstrate his commitment to improving measurement reliability in plasma chambers. His work is essential for advancements in various technological applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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