Company Filing History:
Years Active: 2020-2025
Title: Innovations of Dong Fang in Power MOS Devices
Introduction
Dong Fang is a notable inventor based in Chengdu, China, recognized for his contributions to the field of power MOS devices. With a total of two patents to his name, he has made significant advancements in technology that enhance the efficiency and functionality of electronic devices.
Latest Patents
Dong Fang's latest patents include the "Bidirectional conduction trench gate power MOS device and manufacturing method thereof" and the "Split-gate enhanced power MOS device." The bidirectional conduction trench gate power MOS device features a gate electrode, a source electrode, and a drain electrode formed on a silicon wafer surface. This design allows for bidirectional conduction and blocking, making it suitable for applications such as lithium battery BMS protection. The device structure offers several advantages, including a reduced area requirement compared to conventional methods, a simplified manufacturing process, and a symmetrical structure achieved by exchanging the drain and source electrodes.
The split-gate enhanced power MOS device consists of a substrate and an epitaxial layer, with a control gate trench that includes both a gate electrode and a split-gate electrode. This innovative design enhances the performance of power MOS devices by utilizing a dual-gate configuration, which improves control over the device's operation.
Career Highlights
Dong Fang is affiliated with the University of Electronic Science and Technology of China, where he continues to engage in research and development in the field of electronic engineering. His work has contributed to advancements in power management technologies, which are crucial for modern electronic applications.
Collaborations
Dong Fang collaborates with esteemed colleagues such as Ming Qiao and Bo Zhang, who share his commitment to innovation in electronic devices. Their combined expertise fosters a productive research environment that drives technological advancements.
Conclusion
Dong Fang's contributions to the field of power MOS devices exemplify the importance of innovation in technology. His patents reflect a commitment to improving electronic device efficiency and functionality, paving the way for future advancements in the industry.