The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Apr. 06, 2022
University of Electronic Science and Technology of China, Chengdu, CN;
Ming Qiao, Chengdu, CN;
Yong Chen, Chengdu, CN;
Wenliang Liu, Chengdu, CN;
Dong Fang, Chengdu, CN;
Fabei Zhang, Chengdu, CN;
Bo Zhang, Chengdu, CN;
University of Electronic Science and Technology of China, Chengdu, CN;
Abstract
A bidirectional conduction trench gate power MOS device and a manufacturing method thereof are provided. A gate electrode, a source electrode and a drain electrode are formed on a surface of a silicon wafer to realize a bidirectional conduction and bidirectional blocking power MOS device used in an application environment such as lithium battery BMS protection. A device structure of the bidirectional conduction trench gate power MOS device has advantages compared with double-transistor series connection used in a conventional BMS and other structures for realizing a bidirectional conduction: firstly, the bidirectional conduction trench gate power MOS device needs to occupy half or less area compared with a conventional mode, improving a degree of integration; secondly, the device structure has a simple manufacturing process and a low manufacturing cost reducing manufacturing problems; thirdly, the drain electrode and the source electrode of the device structure are exchanged to realize a symmetrical structure.