University of Electronic Science and Technology of China

Dong Fang

Bo Zhang

Ming Qiao

Zhengkang Wang

Ruidi Wang

Wenliang Liu

Fabei Zhang

Yong Chen

A bidirectional conduction trench gate power MOS device and a manufacturing method thereof are provided. A gate electrode, a source electrode and a drain electrode are formed on a surface of a silicon wafer to realize a bidirectional conduction and bidirectional blocking power MOS device used in an application environment such as lithium battery BMS protection. A device structure of the bidirectional conduction trench gate power MOS device has advantages compared with double-transistor series connection used in a conventional BMS and other structures for realizing a bidirectional conduction: firstly, the bidirectional conduction trench gate power MOS device needs to occupy half or less area compared with a conventional mode, improving a degree of integration; secondly, the device structure has a simple manufacturing process and a low manufacturing cost reducing manufacturing problems; thirdly, the drain electrode and the source electrode of the device structure are exchanged to realize a symmetrical structure.

Bidirectional conduction trench gate power MOS device and manufacturing method thereof

A split-gate enhanced power MOS device includes a substrate and an epitaxial layer formed on an upper surface of the substrate. A control gate trench is provided in the epitaxial layer. The control gate trench includes a gate electrode and a split-gate electrode. The gate electrode includes a first gate electrode and a second gate electrode. The first gate electrode and the second gate electrode are located in an upper half portion of the control gate trench and are separated by a first dielectric layer. The first gate electrode and the second gate electrode are located above the split-gate electrode and are separated from the split-gate electrode by a second dielectric layer. The first gate electrode and the second gate electrode are separated from a body region in the epitaxial layer by a gate dielectric.

Split-gate enhanced power MOS device

Growing community of inventors

Chengdu, China

Dong Fang