Donald W Eckart

This inventor holds 25 USPTO granted patents, primarily in Superconducting Materials. Top assignees: US Government as Represented by the Secretary of the Army, Other. Active years: 1989-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Donald W Eckart. Retrieved from https://idiyas.com/inventor/donald-w-eckart

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 25

% Patents Active = 80.0

Average Co-Inventor Count = 3.4

ph-index = 4

Forward Citations = 85(Granted Patents)

Location History:

Wall Township, Belmar County, NJ (US) (1989)
Wall Township, Monmouth County, NJ (US) (1989)
Wall, NJ (US) (1989 - 2008)

Company Filing History:

24 out of 8,753

US Government as Represented by the Secretary of the Army

patents

1 out of 834,601

Other

patents

Years Active: 1989-2008

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Areas of Expertise:

Rare Earth Metal Compounds

High Critical Temperature

Josephson Junctions

Thin Film Super-Conductors

Thermionic Cathode

Ferroelectrics

Pyroelectrics

Piezoelectrics

Superconducting Switch

Cathode Preparation

Material Composition

Film Thickness Measurement

25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7336981 - Rare earth metal compounds for use in high critical temperature Josephson junctions (2008-02-26),

2. 7312182 - Rare earth metal compounds for use in high critical temperature thin film super-conductors (2007-12-25),

3. 7306855 - Rare earth metal compounds for use in high critical temperature thin film structures for super-conductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrids (2007-12-11),

4. 7192661 - Rare earth metal compounds for use in high critical temperature thin film super-conducting antennas (2007-03-20),

5. 6827915 - Rare earth metal compounds for use in high critical temperature thin film super-conductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrids (2004-12-07),

6. 5951352 - Methods of making thermionic cathode using oxygen deficient and fully (1999-09-14),

7. 5828164 - Thermionic cathode using oxygen deficient and fully oxidized material (1998-10-27),

8. 5814584 - Compound in the series A.sub.2 MeSbO.sub.6 for use as substrates (1998-09-29),

9. 5608282 - Piezoelectrically controlled superconducting switch (1997-03-04),

10. 5558905 - Method of making a pyroelectric film sensing device (1996-09-24),

11. 5545945 - Thermionic cathode (1996-08-13),

12. 5443684 - Method for measuring thin film thickness (1995-08-22),

13. 5298830 - Method of preparing an impregnated cathode with an enhanced thermionic (1994-03-29),

14. 5114742 - Preparing a scandate cathode by impregnating a porous tungsten billet (1992-05-19),

15. 5074818 - Method of making and improved scandate cathode (1991-12-24),

Title: The Inventor Donald W Eckart: Pioneering Innovations in Wall, NJ

Introduction: Donald W Eckart is a distinguished inventor based in Wall, NJ, known for his groundbreaking contributions to various fields through his innovative creations.

Latest Patents: Donald W Eckart holds several patents in diverse areas, showcasing his versatility and creativity in inventing new solutions to complex problems.

Career Highlights: Throughout his illustrious career, Donald W Eckart has consistently demonstrated a keen eye for identifying gaps in the market and developing unique inventions to address them. His passion for innovation has led to the creation of numerous successful products that have made a significant impact on industries.

Collaborations: Donald W Eckart has collaborated with leading companies, research institutions, and universities to further his inventions and bring them to market. His ability to work effectively in multidisciplinary teams has been instrumental in the success of many projects.

Conclusion: In conclusion, Donald W Eckart's dedication to innovation and his remarkable creativity have established him as a prominent figure in the world of inventors. His contributions continue to inspire future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]