Donald T Olson

Title: The Innovative Contributions of Donald T. Olson

Introduction

Donald T. Olson is a notable inventor based in Circle Pines, Minnesota, with a remarkable portfolio of five patents. His work primarily focuses on advancements in semiconductor technology, particularly in the field of high electron mobility transistors.

Latest Patents

Among his latest patents is the development of an aluminum gallium nitride laser. This invention showcases a method of creating a high electron mobility transistor that leverages the increased mobility provided by a two-dimensional electron gas in GaN/Al.sub.x Ga.sub.1-x N heterojunctions. These structures are deposited on basal plane sapphire using low-pressure metalorganic chemical vapor deposition. The electron mobility of the heterojunction reaches approximately 620 cm.sup.2 per volt second at room temperature, significantly outperforming the 56 cm.sup.2 per volt second mobility of bulk GaN of the same thickness under identical conditions. Notably, the mobility of the bulk sample peaks at 62 cm.sup.2 per volt second at 180 K and decreases to 19 cm.sup.2 per volt second at 77 K. In contrast, the heterostructure mobility increases to 1,600 cm.sup.2 per volt second at 77 K and saturates at 4 K.

Career Highlights

Throughout his career, Donald T. Olson has made significant contributions to the field of optics and semiconductor technology. He has worked with companies such as Apa Optics, Inc., where he applied his expertise in developing innovative solutions.

Collaborations

Donald has collaborated with esteemed colleagues, including James M. VanHove and Jon N. Kuznia, who have contributed to his research and development efforts.

Conclusion

Donald T. Olson's innovative work in high electron mobility transistors and semiconductor technology has made a lasting impact in the field. His contributions continue to influence advancements in electronics and optics.