Warren, NJ, United States of America

Donald K Atwood

This inventor holds 1 USPTO granted patent. Top assignee: At&t Bell Laboratories. Active years: 1993.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Donald K Atwood. Retrieved from https://idiyas.com/inventor/donald-k-atwood

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 1993

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1 patent (USPTO):Explore Patents

Title: The Innovations of Donald K. Atwood

Introduction

Donald K. Atwood is a notable inventor based in Warren, NJ (US). He has made significant contributions to the field of materials science, particularly in the area of metal region formation. His work has implications for device applications and the repair of transparent defects in lithographic masks.

Latest Patents

Atwood holds a patent for a method of forming metal regions. This innovative process involves radiation-induced formation of a uniform metal or metal oxide region. The method is designed to ensure that the heat generated during the radiation-induced reactions is carefully controlled to achieve the desired uniformity. He has 1 patent to his name.

Career Highlights

Donald K. Atwood has had a distinguished career at AT&T Bell Laboratories. His work there has allowed him to explore advanced techniques in materials engineering and contribute to the development of new technologies.

Collaborations

Throughout his career, Atwood has collaborated with several talented individuals, including Georgia J. Fisanick and Michal Edith Gross. These collaborations have enriched his research and expanded the impact of his inventions.

Conclusion

Donald K. Atwood's contributions to the field of materials science and his innovative patent demonstrate his commitment to advancing technology. His work continues to influence the development of new applications in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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