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For the Inventor, By the Inventor

Plano, TX, United States of America

Donald J Coleman, Jr

USPTO Granted Patents = 12

Average Co-Inventor Count = 1.4

ph-index = 7

Forward Citations = 374(Granted Patents)


Location History:

  • Plano, TX (US) (1985 - 2000)
  • late of Murphy, TX (US) (2003)

Company Filing History:

goldMedal12 out of 29,279 
 
Texas Instruments Corporation
 patents

Years Active: 1985-2003

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12 patents (USPTO):Explore Patents
1. 6625047 - Micromechanical memory element (2003-09-23),
2. 6115309 - Sense amplifier having increased drive current capability (2000-09-05),
3. 5850366 - Memory array having dummy cells implemented using standard array cells (1998-12-15),
4. 5359216 - DRAM process with improved polysilicon-to-polysilicon capacitor and the (1994-10-25),
5. 5244825 - DRAM process with improved poly-to-poly capacitor (1993-09-14),
6. 5122859 - Iterative self-aligned contact metallization process (1992-06-16),
7. 5098192 - DRAM with improved poly-to-poly capacitor (1992-03-24),
8. 5049525 - Iterative self-aligned contact metallization process (1991-09-17),
9. 4978634 - Method of making trench DRAM cell with stacked capacitor and buried (1990-12-18),
10. 4922312 - DRAM process with improved polysilicon-to-polysilicon capacitor and the (1990-05-01),
11. 4831427 - Ferromagnetic gate memory (1989-05-16),
12. 4521446 - Method for depositing polysilicon over TiO.sub.2 (1985-06-04),

Title: The Innovative Contributions of Donald J Coleman, Jr.

Introduction

Donald J Coleman, Jr. is a notable inventor based in Plano, TX (US), recognized for his significant contributions to the field of semiconductor technology. With a total of 12 patents to his name, he has made remarkable advancements that have influenced modern memory devices.

Latest Patents

Among his latest inventions is a micromechanical memory element. This innovative device comprises a deflectable member located between a first member and a second member. The first member is biased at a first member voltage, while the second member is biased at a second member voltage. A bias voltage applied to the deflectable member drives it to either the first or second member. The design includes a first contact positioned on the top of the first member and a second contact on the second member, both biased through resistors. This configuration allows the deflectable member to remain in place even after the removal of the bias voltage. The state of the micromechanical memory element can be determined by sensing the voltage of the deflectable member.

Another significant patent is for a sense amplifier with increased drive current capability. This semiconductor memory device sensing circuit includes multiple sense amplifiers, each coupled to a first supply node by a first driver device and to a second supply node by a second driver device. The circuit features first and second boost capacitors that enhance the driving current capability, improving the overall performance of the memory device.

Career Highlights

Donald J Coleman, Jr. is currently employed at Texas Instruments Corporation, where he continues to innovate and develop cutting-edge technologies. His work has played a crucial role in advancing semiconductor memory solutions, making him a valuable asset to the company.

Collaborations

Throughout his career, Coleman has collaborated with esteemed colleagues, including Roger A Haken and Bing-Whey Shen. These partnerships have fostered a creative environment that has led to the development of groundbreaking technologies.

Conclusion

Donald J Coleman, Jr. exemplifies the spirit of innovation in the semiconductor industry. His contributions, particularly in micromechanical memory elements and sense amplifier technology, have significantly impacted the field. His ongoing work at Texas Instruments Corporation promises to yield further advancements in technology.

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