Donald J Bray

Title: Innovations of Donald J Bray in Silicon Carbide Manufacturing

Introduction

Donald J Bray is an accomplished inventor based in Irving, TX (US). He has made significant contributions to the field of materials science, particularly in the manufacturing of silicon carbide (SiC) articles. With a total of 2 patents to his name, Bray's work has advanced the methods used in producing dense silicon carbide materials.

Latest Patents

One of Bray's latest patents is a process for the manufacturing of dense silicon carbide. This innovative method involves producing near-net shape porous silicon carbide articles that are subsequently densified. The process includes filling a substantial number of pores within the porous SiC article with a carbon precursor, a silicon carbide precursor, or a mixture of both. The filled SiC preform is then heated to convert the precursors into porous carbon or SiC within the pores. The impregnation and pyrolysis cycle is repeated until the desired density is achieved. In cases where a carbon or a mixture of silicon carbide and carbon precursor is used, the pyrolyzed article is contacted with silicon in an inert atmosphere. This allows silicon to diffuse through the article and react with the carbon, producing a new phase of silicon carbide within the pores. The result is a near-net dense silicon carbide article.

Career Highlights

Bray is currently employed at Poco Graphite, Inc., where he continues to innovate in the field of silicon carbide manufacturing. His work has not only contributed to the advancement of materials science but has also positioned his company as a leader in the industry.

Collaborations

Bray has collaborated with notable coworkers such as Abuagela H Rashed and Rex Gerald Sheppard. These partnerships have further enhanced the research and development efforts at Poco Graphite, Inc.

Conclusion

Donald J Bray's contributions to the manufacturing of dense silicon carbide articles exemplify the impact of innovation in materials science. His patents and ongoing work continue to shape the future of silicon carbide production.