The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 21, 2010

Filed:

Jun. 29, 2005
Applicants:

Abuagela H. Rashed, Denton, TX (US);

Rex G. Sheppard, Decatur, TX (US);

Donald J. Bray, Irving, TX (US);

Inventors:

Abuagela H. Rashed, Denton, TX (US);

Rex G. Sheppard, Decatur, TX (US);

Donald J. Bray, Irving, TX (US);

Assignee:

Poco Graphite, Inc., Decatur, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/32 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of producing a densified SiC article is provided. Near-net shape porous silicon carbide articles are produced and densified using the developed method. A substantial number of pores within the porous near-net shape silicon carbide article are filled (impregnated) with a carbon precursor, a silicon carbide precursor, or a mixture of both. The carbon precursor can be liquid or gas. The filled SiC preform is heated to convert the carbon or silicon carbide precursor to porous carbon or SiC preform inside the pores of the net-shape silicon carbide article. The impregnation/pyrolysis cycle is repeated until the desired amount of carbon and/or silicon carbide is achieved. In case of a carbon or a mixture of silicon carbide/carbon precursor is used, the pyrolyzed near-net shape silicon carbide article is then contacted with silicon in an inert atmosphere. The silicon diffuses through the pyrolyzed near-net shape silicon carbide article and reacts with the carbon contained within the pores of the porous SiC preform producing a new phase of silicon carbide within the pores of the near-net shape silicon carbide article. The produced silicon carbide is a near-net dense silicon carbide article.


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