Do Hwan Kim

Title: The Innovations of Do Hwan Kim

Introduction

Do Hwan Kim is a notable inventor based in Pohang-si, South Korea. He has made significant contributions to the field of image sensor technology, holding a total of three patents. His work focuses on enhancing the performance and efficiency of image sensors, which are crucial components in various electronic devices.

Latest Patents

One of his latest patents is titled "Image sensor having anti-reflective layer and fabricating method thereof." This invention includes a pixel layer with an active pixel array and an optical black pixel array. It features a first anti-reflective layer made of a hafnium oxide layer with high transmittance, and a second anti-reflective layer over the optical black pixel array, which has a hafnium oxide layer with low transmittance. Another significant patent is the "CMOS image sensor having optical block area." This CMOS image sensor is designed with an active pixel structure that senses light and converts it into an electrical signal. It also includes an optical block structure that blocks visible light while allowing UV light to pass through, enabling the evaluation of the electrical characteristics of the active pixel area.

Career Highlights

Do Hwan Kim has worked with prominent companies such as SK Hynix Inc. and the POSTECH Academy-Industry Foundation. His experience in these organizations has allowed him to develop and refine his innovative ideas in image sensor technology.

Collaborations

He has collaborated with notable coworkers, including Hyun Chul Sohn and Hee Do Na. Their combined expertise has contributed to the advancement of their projects and innovations.

Conclusion

Do Hwan Kim's contributions to image sensor technology through his patents and collaborations highlight his role as a significant inventor in the field. His work continues to influence advancements in electronic devices and imaging solutions.