Suwon, South Korea

Do Hoon Kwon

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Do Hoon Kwon. Retrieved from https://idiyas.com/inventor/do-hoon-kwon-qdhnb0x4

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: The Innovations of Do Hoon Kwon

Introduction

Do Hoon Kwon is a notable inventor based in Suwon, South Korea. He has made significant contributions to the field of plasma processing technology. His work is particularly recognized for its innovative approach to RF sensing apparatuses.

Latest Patents

Kwon holds a patent for an RF sensing apparatus of a plasma processing chamber. This invention includes a penetration unit that is opened in an up/down direction, a main return path unit that surrounds all or a portion of the penetration unit, and a secondary return path unit located between the penetration unit and the main return path unit. The design allows for a current to flow in one of the up/down directions, enhancing the efficiency of plasma processing chambers.

Career Highlights

Do Hoon Kwon is currently employed at Samsung Electronics Co., Ltd., where he continues to innovate and develop new technologies. His work has been instrumental in advancing the capabilities of plasma processing systems.

Collaborations

Kwon has collaborated with talented coworkers such as Chan Soo Kang and Min Ju Kim. Their combined expertise has contributed to the success of various projects within the company.

Conclusion

Do Hoon Kwon's contributions to the field of plasma processing technology exemplify the spirit of innovation. His patent and ongoing work at Samsung Electronics Co., Ltd. highlight his commitment to advancing technology in this area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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