Ding Wang

Title: Ding Wang: Advancing Gallium Nitride Ferroelectronics

Introduction

Ding Wang is an inventor based in Ann Arbor, Michigan, and is associated with the University of Michigan. His patent work addresses epitaxial gallium nitride alloy ferroelectronics, a materials approach with potential relevance to electronic devices.

Latest Patents

Wang is named on one patent: “Epitaxial Gallium Nitride Alloy Ferroelectronics.” The invention describes fabricating a heterostructure by providing a substrate and using a non-sputtered epitaxial growth procedure to form a wurtzite structure supported by that substrate. The structure includes a gallium nitride alloy, with a group IIIB element incorporated during growth. The patent further describes a breakdown field strength greater than the structure’s ferroelectric coercive field strength. Wang’s listed patent portfolio includes 1 patent.

Career Highlights

Wang’s identified patent highlights work on epitaxial growth and ferroelectric properties in gallium nitride alloys. His association with the University of Michigan connects this invention to the university’s research and innovation community.

Collaborations

Ping Wang is identified as Wang’s coworker. The available information does not specify their roles in the patent or the nature of their collaboration.

Conclusion

Ding Wang’s patent focuses on a gallium nitride alloy heterostructure designed to combine epitaxial growth with ferroelectric performance, reflecting his contribution to materials innovation at the University of Michigan.