logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12696699 B1

PDFFull Text
Date of Patent:
Jul. 28, 2026

Filed:

Sep. 08, 2022

Epitaxial gallium nitride alloy ferroelectronics

Applicant:

The Regents of the University of Michigan, Ann Arbor, MI (US);

Inventors:

Zetian Mi, Ann Arbor, MI (US);

Ping Wang, Ann Arbor, MI (US);

Ding Wang, Ann Arbor, MI (US);

Assignee:

The Regents of the University of Michigan, Ann Arbor, MI (US);

Attorney:

Lempia Summerfield Katz LLC

Primary Examiner:

Xiaoming Liu

Int. Cl.
CPC ...
H10D 62/10 (2025.01); C30B 25/10 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H10B 51/30 (2023.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 30/69 (2025.01); H10D 62/85 (2025.01); H10D 64/01 (2025.01); H10D 64/68 (2025.01); H10P 14/692 (2026.01);
U.S. Cl.
CPC ...
H10P 14/69396 (2026.01); C30B 25/10 (2013.01); C30B 25/18 (2013.01); C30B 29/406 (2013.01); H10B 51/30 (2023.02); H10D 30/015 (2025.01); H10D 30/0415 (2025.01); H10D 30/475 (2025.01); H10D 30/701 (2025.01); H10D 62/102 (2025.01); H10D 62/8503 (2025.01); H10D 64/033 (2025.01); H10D 64/689 (2025.01); H10P 14/69397 (2026.01);
Abstract

A method of fabricating a heterostructure includes providing a substrate, and implementing a non-sputtered, epitaxial growth procedure at a growth temperature to form a wurtzite structure supported by the substrate. The wurtzite structure includes an alloy of gallium nitride. The non-sputtered, epitaxial growth procedure is configured to incorporate a group IIIB element into the alloy. The wurtzite structure exhibits a breakdown field strength greater than a ferroelectric coercive field strength of the wurtzite structure.

Find Patent Forward Citations

Mi, Zetian. (2026). Epitaxial gallium nitride alloy ferroelectronics (U.S. Patent No. 12696699). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12696699

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…