The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Sep. 08, 2022
Applicant:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Inventors:
Assignee:
The Regents of the University of Michigan, Ann Arbor, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/10 (2025.01); C30B 25/10 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01); H10B 51/30 (2023.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 30/69 (2025.01); H10D 62/85 (2025.01); H10D 64/01 (2025.01); H10D 64/68 (2025.01); H10P 14/692 (2026.01);
U.S. Cl.
CPC ...
H10P 14/69396 (2026.01); C30B 25/10 (2013.01); C30B 25/18 (2013.01); C30B 29/406 (2013.01); H10B 51/30 (2023.02); H10D 30/015 (2025.01); H10D 30/0415 (2025.01); H10D 30/475 (2025.01); H10D 30/701 (2025.01); H10D 62/102 (2025.01); H10D 62/8503 (2025.01); H10D 64/033 (2025.01); H10D 64/689 (2025.01); H10P 14/69397 (2026.01);
Abstract
A method of fabricating a heterostructure includes providing a substrate, and implementing a non-sputtered, epitaxial growth procedure at a growth temperature to form a wurtzite structure supported by the substrate. The wurtzite structure includes an alloy of gallium nitride. The non-sputtered, epitaxial growth procedure is configured to incorporate a group IIIB element into the alloy. The wurtzite structure exhibits a breakdown field strength greater than a ferroelectric coercive field strength of the wurtzite structure.