This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Mie University. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: The Innovations of Ding Wang
Introduction
Ding Wang is a notable inventor based in Mie, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on the development of nitride semiconductor substrates, which are essential for various electronic applications.
Latest Patents
Ding Wang holds a patent for a nitride semiconductor substrate, semiconductor element, and method for manufacturing nitride semiconductor substrate. This patent describes a nitride semiconductor substrate that includes a substrate and an AlN-containing film provided above the substrate. The thickness of the AlN-containing film is at most 10,000 nm, and the threading dislocation density of the AlN-containing film is at most 2×10 cm. This innovation is crucial for enhancing the performance of semiconductor devices.
Career Highlights
Ding Wang is affiliated with Mie University, where he continues to advance research in semiconductor materials. His academic background and research initiatives have positioned him as a key figure in the field of semiconductor technology.
Collaborations
Ding Wang collaborates with Kenjiro Uesugi, contributing to various research projects and innovations in semiconductor technology.
Conclusion
Ding Wang's work in nitride semiconductor substrates showcases his innovative spirit and dedication to advancing technology. His contributions are vital for the future of semiconductor applications.