The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Feb. 26, 2021
Applicant:

Mie University, Mie, JP;

Inventors:

Hideto Miyake, Mie, JP;

Ding Wang, Mie, JP;

Kenjiro Uesugi, Mie, JP;

Assignee:

MIE UNIVERSITY, Mie, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/01 (2025.01);
U.S. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/01 (2025.01); H10H 20/01335 (2025.01);
Abstract

A nitride semiconductor substrate () includes: a substrate (); and an AlN-containing film () provided above the substrate (). A thickness of the AlN-containing film () is at most 10000 nm, and a threading dislocation density of the AlN-containing film () is at most 2×10cm.


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