The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2026
Filed:
Feb. 26, 2021
Applicant:
Mie University, Mie, JP;
Inventors:
Assignee:
MIE UNIVERSITY, Mie, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/01 (2025.01);
U.S. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/01 (2025.01); H10H 20/01335 (2025.01);
Abstract
A nitride semiconductor substrate () includes: a substrate (); and an AlN-containing film () provided above the substrate (). A thickness of the AlN-containing film () is at most 10000 nm, and a threading dislocation density of the AlN-containing film () is at most 2×10cm.
Miyake, Hideto. (2026). Nitride semiconductor substrate, semiconductor element, and method for manufacturing nitride semiconductor substrate (U.S. Patent No. 12588323). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12588323
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile