This inventor holds 3 USPTO granted patents and 1 published patent application. Top assignee: National Tsing Hua University. Active years: 2015-2017.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2015-2017
Title: The Innovations of Ding-Shuo Wang
Introduction
Ding-Shuo Wang is an inventor based in Hsinchu County, Taiwan. He is known for his contributions to the field of integrated circuits, particularly in the development of magnetic tunnel junctions. His innovative approach aims to enhance the performance and efficiency of electronic devices.
Latest Patent Applications
Ding-Shuo Wang has filed a patent application for a technology titled "MAGNETIC TUNNEL JUNCTION (MTJ) HAVING A DIFFUSION BLOCKING SPACER LAYER." This application describes an integrated chip that includes a reference magnetic layer and a barrier layer positioned over the reference magnetic layer. A first free magnetic layer is situated above the barrier layer, followed by a second free magnetic layer over the first. A spacer layer, which contains magnesium and a transition metal, is placed between the first and second free magnetic layers. The atomic ratio of magnesium to the transition metal in this spacer layer ranges from 15% to 80%.
Conclusion
Ding-Shuo Wang's work in the field of magnetic tunnel junctions represents a significant step forward in integrated circuit technology. His innovative patent application showcases his commitment to advancing electronic device performance.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile