Tsinghua University

Ding-Shuo Wang

Chih-Huang Lai

Ming-Han Tsai

Kuo-Feng Huang

Hsiu-Hau Lin

An SOT-MRAM comprises a substrate, and an SOT memory cell disposed on the substrate and including a magnetic free layer. The magnetic free layer includes a first metal film exhibiting ferromagnetic characteristics, and a second metal film for generating a spin-Hall effect. The first metal film has a thickness sufficient to allow the magnetic free layer, after being applied with a first external magnetic field which is subsequently removed, to have a magnetization ratio ranging from &#x2212;0.9 to 0.9. The first metal film, upon being applied with a second external magnetic field and an electric pulse, has multiple magnetic domains when a current density resulting from the electric pulse is greater than a critical value.

Spin-orbit torque magnetic random access memory and method of writing the same

A magnetic electronic device comprises a substrate, a first buffer layer, a first CoFeB layer, a first metal oxidation layer, a second buffer and a capping layer. The first buffer layer is disposed on the substrate. The first CoFeB layer is disposed on the first buffer layer. The first metal oxidation layer is disposed on the first CoFeB layer. The second buffer is disposed on the first metal oxidation layer, and the material of the second buffer layer includes platinum, palladium, tantalum or their any combination. The capping layer disposed on the second buffer. A manufacturing method of the magnetic electronic device is also disclosed.

Magnetic electronic device and manufacturing method thereof

A magnetic electronic device comprises a substrate, a buffer layer, a first CoFeB layer, a first metal oxidation layer and a capping layer. The buffer layer is disposed above the substrate. The first CoFeB layer is disposed above the buffer layer. The first metal oxidation layer is disposed above the first CoFeB layer. The capping layer is disposed above the first metal oxidation layer and covers the first metal oxidation layer. A manufacturing method of the magnetic electronic device is also disclosed.

Growing community of inventors

Hsinchu, Taiwan

Ding-Shuo Wang