Dimitri R Kioussis

Title: The Innovations of Dimitri R Kioussis

Introduction

Dimitri R Kioussis is a prominent inventor based in San Diego, CA. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance of semiconductor structures, which is crucial for the advancement of electronic devices.

Latest Patents

Kioussis's latest patents include an innovative air gap semiconductor structure with a selective cap bilayer. This patent describes a semiconductor substrate that includes one or more conductors. A first layer and a second layer are deposited on the top surface of the conductors. A dielectric cap layer is formed over the semiconductor substrate, and air gaps are etched into the dielectric layer. The result is a bilayer cap air gap structure that demonstrates effective electrical performance. Another patent details the method of forming this air gap semiconductor structure with a selective cap bilayer, reiterating the importance of the dielectric cap layer and the etching process.

Career Highlights

Dimitri R Kioussis is associated with International Business Machines Corporation, commonly known as IBM. His work at IBM has allowed him to be at the forefront of semiconductor research and development. His innovative approaches have contributed to the company's reputation as a leader in technology.

Collaborations

Kioussis has collaborated with notable colleagues such as Stephen McConnell Gates and Elbert Emin Huang. These collaborations have further enriched his research and development efforts, leading to advancements in semiconductor technology.

Conclusion

Dimitri R Kioussis is a key figure in the semiconductor industry, with a focus on innovative structures that enhance electrical performance. His contributions through patents and collaborations continue to influence the field significantly.