The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 05, 2016
Filed:
Nov. 10, 2014
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Stephen M. Gates, Ossining, NY (US);
Elbert E. Huang, Carmel, NY (US);
Dimitri R. Kioussis, San Diego, CA (US);
Christopher J. Penny, Saratoga Springs, NY (US);
Deepika Priyadarshini, Guilderland, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/7682 (2013.01); H01L 21/31111 (2013.01); H01L 21/7685 (2013.01); H01L 21/76802 (2013.01); H01L 21/76834 (2013.01); H01L 23/528 (2013.01); H01L 23/5329 (2013.01); H01L 23/53209 (2013.01); H01L 23/53223 (2013.01); H01L 23/53238 (2013.01); H01L 23/53252 (2013.01); H01L 23/53266 (2013.01);
Abstract
A semiconductor substrate including one or more conductors is provided. A first layer and a second layer are deposited on the top surface of the conductors. A dielectric cap layer is formed over the semiconductor substrate and air gaps are etched into the dielectric layer. The result is a bilayer cap air gap structure with effective electrical performance.
Published as: