Noblesville, IN, United States of America

Diane W Sidner


Average Co-Inventor Count = 3.0

ph-index = 3

Forward Citations = 116(Granted Patents)


Company Filing History:


Years Active: 1990-2004

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5 patents (USPTO):Explore Patents

Title: Diane W. Sidner: Innovator in Semiconductor Technology

Introduction

Diane W. Sidner is a notable inventor based in Noblesville, IN (US). She has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. Her work focuses on improving the efficiency and reliability of semiconductor devices.

Latest Patents

One of her latest patents is titled "Apparatus and method for determining leakage current between a first semiconductor region and a second semiconductor region to be formed therein." This invention includes a system for measuring surface minority carrier leakage within the first semiconductor region. A correlation is established between surface minority carrier lifetime in the first semiconductor region and leakage current between the first and second semiconductor regions. In one embodiment, a surface minority carrier lifetime threshold is designated based on this correlation. Leakage current between the first and second regions is deemed acceptable if the measured surface minority carrier lifetime exceeds this threshold. In an alternate embodiment, a leakage current threshold is established, and the measured surface minority carrier leakage is converted via the correlation to a measured leakage current. Leakage current between the first and second regions is acceptable in this embodiment if the measured leakage current is less than the leakage current threshold.

Another significant patent is the "Method of forming semiconductor stalk structure by epitaxial growth." This method involves forming a moat with a flat bottom and tapered side walls in a monocrystalline silicon body. An oxide layer is grown over the side walls and bottom of the moat, which is then selectively removed to expose silicon. An epitaxial stalk is grown on the silicon at the bottom of the moat to a height that makes its top at least coplanar with the top surface of the substrate.

Career Highlights

Diane has worked with prominent companies in the industry, including Delco Electronics Corporation and Delphi Technologies, Inc. Her experience in these organizations has contributed to her expertise in semiconductor technology and innovation.

Collaborations

Throughout her career, Diane has collaborated with notable colleagues such as Douglas J. Yoder and David E. Moss. These collaborations have further enriched her work and contributions to the field.

Conclusion

Diane W. Sidner is a pioneering inventor whose work in semiconductor technology has led to several important patents. Her contributions continue to influence the industry and pave the way for future innovations.

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