The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 1990
Filed:
Mar. 06, 1989
Applicant:
Inventors:
Diane W Sidner, Noblesville, IN (US);
Douglas J Yoder, Sharpsville, IN (US);
David E Moss, Kokomo, IN (US);
Assignee:
Delco Electronics Corporation, Kokomo, IN (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01L / ; G01L / ;
U.S. Cl.
CPC ...
73727 ; 338-4 ;
Abstract
A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.
Sidner, Diane. (1990). Semiconductive structure useful as a pressure sensor (U.S. Patent No. 4945769). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4945769
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile