Location History:
- Bengaluru, IN (2014)
- Ahmedabad, IN (2015)
Company Filing History:
Years Active: 2014-2015
Title: Dharmesh Kishor Tirthdasani: Innovator in Memory Device Technology
Introduction
Dharmesh Kishor Tirthdasani is a notable inventor based in Bengaluru, India. He has made significant contributions to the field of memory device technology, holding a total of 4 patents. His work focuses on enhancing the efficiency and performance of memory devices, particularly in reducing power consumption.
Latest Patents
One of his latest patents is titled "Power gated memory device with power state indication." This invention involves a memory device that includes one or more power gates and state signaling circuitry. Each power gate can be configured to power down specific portions of the memory device. The state signaling circuitry produces a power state output signal that indicates when the memory device is fully powered up.
Another significant patent is "Method and apparatus for decreasing leakage power consumption in power gated memories." This method controls the power mode of a memory device by providing a power mode control signal that responds to a control signal and frequency information. The control signal is generated by a processing device connected to the memory device. This invention aims to optimize power consumption by managing different power modes, including light sleep and deep sleep modes.
Career Highlights
Dharmesh currently works at LSI Corporation, where he continues to innovate in the field of memory technology. His expertise in power management and memory devices has positioned him as a key contributor to advancements in this area.
Collaborations
He collaborates with talented professionals such as Romeshkumar Bharatkumar Mehta and Srinivasa Rao Kothamasu, further enhancing the innovative environment at LSI Corporation.
Conclusion
Dharmesh Kishor Tirthdasani is a prominent inventor whose work in memory device technology has led to significant advancements in power management. His contributions are vital for the ongoing development of efficient memory systems.