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For the Inventor, By the Inventor

Essex Junction, VT, United States of America

Dennis Hoyniak

This inventor holds 5 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 2000-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dennis Hoyniak. Retrieved from https://idiyas.com/inventor/dennis-hoyniak

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 5

% Patents Active = 80.0

Average Co-Inventor Count = 3.9

ph-index = 3

Forward Citations = 63(Granted Patents)


Company Filing History:

goldMedal5 out of 166,409 
 
International Business Machines Corporation
 patents

Years Active: 2000-2004

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5 patents (USPTO):Explore Patents
1. 6797592 - Method for forming a retrograde implant (2004-09-28),
2. 6610585 - Method for forming a retrograde implant (2003-08-26),
3. 6504207 - Method to create EEPROM memory structures integrated with high performance logic and NVRAM, and operating conditions for the same (2003-01-07),
4. 6271565 - Asymmetrical field effect transistor (2001-08-07),
5. 6083794 - Method to perform selective drain engineering with a non-critical mask (2000-07-04),

Title: Innovations and Contributions of Inventor Dennis Hoyniak

Introduction

Dennis Hoyniak, an inventive mind located in Essex Junction, Vermont, has made significant contributions to the field of ion implantation with his innovative approaches. With a total of five patents, Hoyniak has demonstrated his capability in advancing technologies that are crucial for various applications.

Latest Patents

Among his latest inventions, one notable patent focuses on a method for forming a retrograde implant. This method involves several critical steps: providing a substrate, forming a masking image with a sidewall on the substrate, and creating a blocking layer on both the substrate and the masking image. The retrograde ion implant is then performed through the blocking layer into the substrate, significantly blocking ions that may scatter at the sidewall of the masking layer. This innovative technique enhances the efficiency and effectiveness of ion implantation processes.

Career Highlights

Dennis Hoyniak is currently affiliated with International Business Machines Corporation (IBM), a global leader in technology and innovation. His experience and expertise in the field of ion implantation have positioned him as an essential contributor to the research and development efforts at IBM. His work has not only advanced the company's technological edge but has also influenced industry standards.

Collaborations

Throughout his career, Dennis has collaborated with esteemed colleagues, including Terence B Hook and Edward J Nowak. These partnerships have fostered an environment of innovation, allowing for shared insights and collaborative breakthroughs in technology.

Conclusion

The contributions of Dennis Hoyniak to the field of ion implantation are noteworthy. His latest patents exemplify his dedication to innovation and the advancement of technology. As a part of IBM, Hoyniak continues to push the boundaries of what is possible in his field, solidifying his reputation as a significant inventor in the technological landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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