Sarov, Russia

Denis V Nagorny

This inventor holds 1 USPTO granted patent. Top assignee: Intel Corporation. Active years: 2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Denis V Nagorny. Retrieved from https://idiyas.com/inventor/denis-v-nagorny

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2011

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1 patent (USPTO):Explore Patents

Title: Innovations of Denis V Nagorny

Introduction

Denis V Nagorny is a notable inventor based in Sarov, Russia. He has made significant contributions to the field of memory management through his innovative patent. His work is particularly relevant in the context of modern computing and memory optimization.

Latest Patents

Denis holds a patent for a method titled "Memory registration caching." This invention involves a sophisticated process that includes enumerating a first process in response to an activated memory registration cache. The method also entails finding an import table for the first module, changing pointers to refer to memory management routines in a second library, and intercepting memory allocation requests. This patent showcases his expertise in enhancing memory management systems.

Career Highlights

Denis is currently employed at Intel Corporation, a leading technology company known for its innovations in computing. His role at Intel allows him to work on cutting-edge technologies and contribute to advancements in the field of computer science.

Collaborations

Denis collaborates with Alexander V Supalov, a fellow innovator. Their partnership exemplifies the collaborative spirit that drives innovation in technology.

Conclusion

Denis V Nagorny is a prominent inventor whose work in memory management has the potential to influence future developments in computing. His contributions reflect the importance of innovation in technology and the ongoing quest for efficiency in memory systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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