Denis M Nothern

Title: Innovations of Denis M Nothern in Ultraviolet Light Emitting Diodes

Introduction

Denis M Nothern is an accomplished inventor based in Watertown, MA (US). He has made significant contributions to the field of light-emitting diodes, particularly in ultraviolet (UV) technology. His innovative work has led to the development of a patent that enhances the efficiency and effectiveness of UV LEDs.

Latest Patents

Denis M Nothern holds a patent for ultraviolet light-emitting diodes. This invention provides a design for UV LEDs that includes a base layer made of p-type SiC or p-type AlGaN, an active layer, and an n-AlGaN layer. The active layer is strategically placed between the base layer and the n-AlGaN layer. Notably, the invention addresses absorption losses in p-SiC by incorporating a conductive AlGaN Distributed Bragg Reflector (DBR) between the p-type SiC layer and the active layer. Additionally, the n-AlGaN layer can be textured to enhance extraction efficiency, achieving an external quantum efficiency of 20-30% or more.

Career Highlights

Denis M Nothern is affiliated with Boston University, where he continues to contribute to research and innovation in the field of semiconductor technology. His work has garnered attention for its potential applications in various industries, including healthcare and environmental monitoring.

Collaborations

Denis has collaborated with notable colleagues such as Gordon C Brummer and Theodore D Moustakas. These partnerships have furthered advancements in the field of UV LED technology.

Conclusion

Denis M Nothern's contributions to the development of ultraviolet light-emitting diodes represent a significant advancement in LED technology. His innovative approach and collaboration with esteemed colleagues highlight the importance of teamwork in driving technological progress.